ksc2073 ? npn epitaxial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com ksc2073 rev. a1 1 september 2011 ksc2073 npn epitaxial silicon transistor features ? tv vertical deflection output ? complement to ksa940 ? collector-base voltage : v cbo = 150v absolute maximum ratings t a = 25c unless otherwise noted electrical characteristics t a = 25c unless otherwise noted h fe classification symbol parameter value units v cbo collector-base voltage 150 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 5 v i c collector current 1.5 a p c collector dissipation (t c = 25 c) 25 w t j junction temperature 150 c t stg storage temperature - 55 to 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = 500 a, i e = 0 150 v bv ceo collector-emitter breakdown voltage i c = 10ma, i b = 0 150 v bv ebo emitter-base breakdown voltage i e = 500 a, i c = 0 5 v i cbo collector cut-off current v cb = 120v, i e = 0 10 a h fe dc current gain v ce = 10v, i c = 0.5a 40 75 140 v ce (sat) collector-emitter saturation voltage i c = 500ma, i b = 50ma 1 v f t current gain bandwidth product v ce = 10v, i c = 0.5a 4 mhz c ob output capacitance v cb =10v, i e = 0, f = 1mhz 50 pf classification h1 h2 h fe 40 ~ 80 60 ~ 125 1.base 2.collector 3.emitter 1 to-220
ksc2073 ? npn epitaxial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com ksc2073 rev. a1 2 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter sa turation voltage figure 4. collector-emitter on voltage figure 5. safe operating area figure 6. power derating 0 5 10 15 20 25 30 35 40 45 50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i b =1ma i b =2ma i b =3ma i b =4ma i b =5ma i b =6ma i b =7ma i b =8ma i c [a], collector current v ce [v], collector-emitter voltage 0.01 0.1 1 10 10 100 1000 v ce =10v h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 v ce (sat) v be (sat) i c =10i b v be (sat),v ce (sat)[v], saturation voltage i c [a], collector current 110100 10 100 1000 f=1mhz i e =0 c ob [pf], capacitance v cb [v], collector-base voltage 10 100 0.1 1 10 s/b limitation s/b limitation thermal limitation dc *1ms 1.t c =25 o c 2.*single pulse i c [a], collector current v ce [v], collector emitter voltage 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 p c [w], power dissipation t c [ o c], case temperature
ksc2073 ? npn epitaxial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com ksc2073 rev. a1 3 physical dimension 4.50 0.2 0 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.1 0 ?.0 5 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters
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